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Basic Electronics

on May 19, 2023

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Atoms

the smallest particle of an element that can exist in combination.

What is an atom? Definition and Structure

Difference Between Conductor, Semiconductor and Insulator c

Semiconductor: P-Type and N-Type, Intrinsic and Extrinsic. - YouTube

Silicon vs Germanium / Difference between Silicon (Si) and Germanium (Ge) - YouTube

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Antenna effect: If long Metal interconnects is connected to the poly gate if the charged particles stored in the metal during fabrication is sufficient to break thin gate oxide, which will act as a Antenna and it will breakdown the gate oxide beneath the poly gate. Antenna Ratio =metal Area(am)/gate area(ag) Preventions: 1)metal jumper:- 2)diode insrtion 3)dummy mos device. Matching: To minimize the mismatch of the device parameters that is called matching (or) To minimize the PVT variation Interdigitation; Here current will reflected to the near by device in which the gate terminals of all the device is shorted with drain and gate of source device. Common centroid: It gives 100% gradients matching. Gradients: Device should have same environment, same size, orientation,supply, temperature and location. Latchup: It is a failure mechanism in which a low resistance

CMOS FABRICATION

CMOS FABRICATION Step1: Substrate Primarily, start the process with a P - substrate. Step2: Oxidation The oxidation process is done by using high - purity oxygen and hydrogen, which are exposed in an oxidation furnace approximately at 1000 degree centigrade. Step3: Photoresist Photoresist is a light-sensitive organic polymer Softens when exposed to light Step4: Masking The photoresist is exposed to UV rays through the N - well mask Step5: Photoresist removal A part of the photoresist layer is removed by treating the wafer with the basic or acidic Step6: Removal of SiO2 using acid etching The SiO2 oxidation layer is removed through the open area made by the removal of photoresist using hydrofluoric acid Step7: Removal of photoresist Strip off the remaining photoresist Step8: Formation of the N - well n-well is formed with diffusion or ion implantation Diffusion: Place wafer in furnace with arsenic gas Heat until As atoms diffuse into expo

ANALOG LAYOUT INTERVIEW QUESTIONS 1

1) Why we Need matching? Types of matching techniques? Explain? 2) Why we Need resister matching? 3) Where do you place the Antenna diode and what is the reason for it? 4) What is shielding, types of shielding techniques and where it will use? 5) Why shielding net is always connected to gnd ? 6) Virtuoso L and Virtuoso XL tool techniques? 7) What is the virtuoso version you have used? 8) What is the difference between MOSFET and BJT? 9) why NMOS technology is preferred mor than PMOS technology? 10) Threshold voltage ? 11) What is ERC Checks and softcheck errors? 12) How to fix the std call height? 13) What is end cap and decap ? 14) CMOS fabrication? 15) CMOS Characteristic? 16) BJT fabrication? 17) Explain

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